JPS603128A - プラズマ酸化装置 - Google Patents

プラズマ酸化装置

Info

Publication number
JPS603128A
JPS603128A JP58111172A JP11117283A JPS603128A JP S603128 A JPS603128 A JP S603128A JP 58111172 A JP58111172 A JP 58111172A JP 11117283 A JP11117283 A JP 11117283A JP S603128 A JPS603128 A JP S603128A
Authority
JP
Japan
Prior art keywords
substrate
oxide film
cathode
plasma oxidation
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58111172A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0122730B2 (en]
Inventor
Yasukazu Seki
康和 関
Noritada Sato
則忠 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Fuji Electric Corporate Research and Development Ltd
Fuji Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd, Fuji Electric Corporate Research and Development Ltd, Fuji Electric Manufacturing Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP58111172A priority Critical patent/JPS603128A/ja
Publication of JPS603128A publication Critical patent/JPS603128A/ja
Publication of JPH0122730B2 publication Critical patent/JPH0122730B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
JP58111172A 1983-06-21 1983-06-21 プラズマ酸化装置 Granted JPS603128A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58111172A JPS603128A (ja) 1983-06-21 1983-06-21 プラズマ酸化装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58111172A JPS603128A (ja) 1983-06-21 1983-06-21 プラズマ酸化装置

Publications (2)

Publication Number Publication Date
JPS603128A true JPS603128A (ja) 1985-01-09
JPH0122730B2 JPH0122730B2 (en]) 1989-04-27

Family

ID=14554303

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58111172A Granted JPS603128A (ja) 1983-06-21 1983-06-21 プラズマ酸化装置

Country Status (1)

Country Link
JP (1) JPS603128A (en])

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04246161A (ja) * 1990-10-24 1992-09-02 Internatl Business Mach Corp <Ibm> 基板表面を酸化処理するための方法及び半導体の構造
JP2008115422A (ja) * 2006-11-02 2008-05-22 Parker Netsu Shori Kogyo Kk プラズマ窒化装置および窒化方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04246161A (ja) * 1990-10-24 1992-09-02 Internatl Business Mach Corp <Ibm> 基板表面を酸化処理するための方法及び半導体の構造
JP2008115422A (ja) * 2006-11-02 2008-05-22 Parker Netsu Shori Kogyo Kk プラズマ窒化装置および窒化方法

Also Published As

Publication number Publication date
JPH0122730B2 (en]) 1989-04-27

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